• Title of article

    New features of the Si(1 0 0)-c(4×4) reconstruction observed with STM: suggestion of the structure with lowered symmetry

  • Author/Authors

    Goryachko، نويسنده , , A and Melnik، نويسنده , , P.V. and Nakhodkin، نويسنده , , N.G and Afanasjeva، نويسنده , , T.V and Koval، نويسنده , , I.F، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2002
  • Pages
    12
  • From page
    47
  • To page
    58
  • Abstract
    We report on the first scanning tunneling microscopy (STM) observations demonstrating that the Si(1 0 0)-c(4×4) surface structure may have a point group symmetry 1 m. Along with those, we were able to reproduce well known images of a point group symmetry 2 mm, which account for most of our STM experiments. We suggest, that the atoms belonging to the c(4×4) unit cell may occupy slightly non-equivalent positions – a difference which is not always detected, thus leading to the observation of a higher symmetry. A refined mixed ad-dimer model of the Si(1 0 0)-c(4×4) reconstruction is proposed and considered for explanation of obtained STM images. The corresponding atomic arrangement is found to be in the state of local energy minimum, not the global one, as confirmed by semi-empirical calculations. When compared with the 2×1 structure in the ad-layer of equal surface atomic density, the refined mixed ad-dimer model was found energetically grossly unfavorable. Thus, its validity can only be tested by more sophisticated ab initio calculations, possibly considering some impurity species. We also demonstrate that the Si(1 0 0)-c(4×4) surface has lower number of defects as the rate of cooling down after annealing at 650 °C decreases. Our data prompt us to think that the c(4×4) reconstruction is not a frozen metastable phase, but the basic factors which stabilize it in favor of a more familiar 2×1 reconstruction still remain unclear.
  • Keywords
    Silicon , Semi-empirical models and model calculations , Surface relaxation and reconstruction , surface structure , Roughness , morphology , Scanning tunneling microscopy , Low index single crystal surfaces , and topography
  • Journal title
    Surface Science
  • Serial Year
    2002
  • Journal title
    Surface Science
  • Record number

    1680877