The surface science of semiconductor processing: gate oxides in the ever-shrinking transistor

Due to the extreme dimensional scaling required by Mooreʹs law, Si device technology is increasingly subject to the limitations imposed by the intrinsic physics and chemistry of surfaces and interfaces. In this review we outline ways in which fundamental surface science has contributed an understanding to the microelectronics community and discuss areas where surface science may impact future development. We focus on the example of silicon dioxide (SiO2) on silicon, since this interface lies at the heart of modern transistor technology and has therefore received a great deal of attention in recent years. We highlight a number of experimental and theoretical approaches that have elucidated the fundamental phenomena associated with the formation and evolution of this critical technological interface, revealing the remarkable interdependence of science and technology that now characterizes this rapidly evolving industry.