Considerations on the ideal sample shape for Total Reflection X-ray Fluorescence Analysis

Total Reflection X-ray Fluorescence analysis (TXRF) is widely used in semiconductor industry for the analysis of silicon wafer surfaces. Typically an external standard is used for the calibration of the spectrometer. This is sensitive to errors in quantification. For small sample amounts the thin film approximation is valid, absorption effects of the exciting and the detected radiation are neglected and the relation between sample amount and fluorescence intensity is linear. For higher total sample amounts deviations from linearity have been observed (saturation effect). These deviations are one of the difficulties for external standard quantification. retical determination of the ideal TXRF sample shape is content of the presented work with the aim to improve the calibration process and therefore the quantification. uorescence intensity emitted by different theoretical sample shapes was calculated, whereby several parameters have been varied (excitation energy, density, diameter/height ratio of the sample). It was investigated which sample shape leads to the highest fluorescence intensity and exhibits the lowest saturation effect. The comparison of the different sample shapes showed that the ring shape matches the ideal TXRF sample shape best.