Title of article
Real time STM observation of Au-assisted decomposition of SiO2 films on Si(1 1 1) at elevated temperatures
Author/Authors
Jun، نويسنده , , Wang and Mitchell، نويسنده , , C.E.J. and Egdell، نويسنده , , R.G. and Foord، نويسنده , , J.S.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2002
Pages
14
From page
66
To page
79
Abstract
The decomposition of ultrathin layers of SiO2 on Si(1 1 1) has been studied in real time in a high temperature scanning tunnelling microscope. Deposition of Au onto the SiO2 surface lowers the temperature of decomposition from 1000 to 940 K. Film decomposition takes place initially at step edges. The mechanism is shown to involve nucleation of Au nanoparticles at step edges, “sinking” of the Au particles to the buried SiO2/Si interface and accelerated reaction of substrate Si with SiO2 around Au nuclei. The Au/Si surface left after film decomposition supports a row-like reconstruction with a periodicity six times that of Si(1 1 1).
Keywords
Scanning tunneling microscopy , Silicon oxides , Gold , surface diffusion , surface structure , morphology , Roughness , Oxidation , and topography
Journal title
Surface Science
Serial Year
2002
Journal title
Surface Science
Record number
1681159
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