Photoemission investigations of manganese thin films deposited on GeS(0 0 1) surfaces

Manganese thin films have been deposited on GeS(0 0 1) cleaved surface. The growth mode, chemical states and Mn 3d density of state (DOS) have been investigated by X-ray and synchrotron radiation photoelectron spectroscopy. Out of these measurements we propose a film model where Mn clusters nucleate on a three-monolayer thick MnS2+Ge interface. Mn 3d DOS and satellite structure of Mn core levels indicate that p–d hybridization is weaker at the Mn/GeS interface than in bulk compound where manganese is covalently bonded.