Title of article :
Structural studies of two- and three-dimensional dysprosium silicides using medium-energy ion scattering
Author/Authors :
Spence، نويسنده , , D.J. and Noakes، نويسنده , , T.C.Q and Bailey، نويسنده , , P. and Tear، نويسنده , , S.P.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2002
Abstract :
Medium-energy ion scattering has been used to determine the atomic structure of two-dimensional and three-dimensional (3D) dysprosium silicide films on the Si(1 1 1) surface. A quantitative study of the ion yield from the dysprosium has enabled the positions of the atoms in the top three layers of the Si(1 1 1)1×1–Dy to be precisely determined. For the case of the Si(1 1 1)(√3×√3)R30°–Dy 3D silicide surface the experimental blocking curves are in agreement with simulations for the structural model determined by surface X-ray diffraction for the Si(1 1 1)(√3×√3)R30°–Er 3D silicide surface. A contraction of 2.0±0.6% in the c-axis lattice constant compared to bulk dysprosium disilicide is found.
Keywords :
Silicon , Silicides , Metal–semiconductor interfaces , Surface relaxation and reconstruction , Low index single crystal surfaces , Medium energy ion scattering (MEIS)
Journal title :
Surface Science
Journal title :
Surface Science