Title of article :
Kinetics of Au induced faceting of vicinal Si(1 1 1)
Author/Authors :
Hild، نويسنده , , R and Seifert، نويسنده , , C and Kammler، نويسنده , , M and Meyer zu Heringdorf، نويسنده , , F.-J and Horn-von-Hoegen، نويسنده , , M. and Zhachuk، نويسنده , , R.A. and Olshanetsky، نويسنده , , B.Z، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2002
Pages :
11
From page :
117
To page :
127
Abstract :
Au induced faceting of vicinal Si(1 1 1) has been studied during adsorption at elevated temperature by spot profile analyzing of low energy electron diffraction and after quenching to room temperature by scanning tunneling microscopy. On the surfaces inclined towards [1 1 2̄] five different types of facets form with increasing Au coverage at adsorption temperatures Tads below 800 °C. They are (4 4 3), (7 7 5), (5 5 3), a stepped (2 2 1), and the (3 3 1) facets. Atomic models for the (5 5 3) and (7 7 5) facet planes are proposed on the basis of high resolution STM images. At Tads=800 °C we found the formation of an ordered step train which covers the entire surface. With further increasing Au coverage the stepped surface decomposes again into (1 1 1) terraces and step bunches. Driving force is the formation of the Si(1 1 1)-(5×2)–Au reconstruction.
Keywords :
Low energy electron diffraction (LEED) , Faceting , Silicon , Adsorption kinetics , Step formation and bunching , Scanning tunneling microscopy , Gold
Journal title :
Surface Science
Serial Year :
2002
Journal title :
Surface Science
Record number :
1681232
Link To Document :
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