Title of article
Flat-band excitonic states in Kagome lattice on semiconductor surfaces
Author/Authors
Ishii، نويسنده , , H. and Nakayama، نويسنده , , T. K. Inoue، نويسنده , , J.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2002
Pages
5
From page
206
To page
210
Abstract
Excitonic properties in the Kagome lattice system, which is produced by quantum wires on semiconductor surfaces, are investigated by using the exact diagonalization of a tight binding model. It is shown that due to the existence of flat bands the binding energy of exciton becomes remarkably large in the two-dimensional Kagome lattice compared to that in one-dimensional lattice, and the exciton Bohr radius is quite small as large as a lattice constant. We also discuss the magnetic field effects on the exciton binding energy and the stability of exciton against the creation of charged exciton and biexciton.
Keywords
Surface electronic phenomena (work function , Surface potential , Surface states , etc.) , Work function measurements , electron density , excitation spectra calculations , Gallium arsenide , Semiconducting surfaces , quantum effects , Indium arsenide , Semi-empirical models and model calculations , Quantum wells
Journal title
Surface Science
Serial Year
2002
Journal title
Surface Science
Record number
1681270
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