Title of article :
Early nucleation on the Si(0 0 1)-2×1 surface
Author/Authors :
Pi، نويسنده , , T.-W and Ouyang، نويسنده , , C.-P and Wen، نويسنده , , J.-F and Tien، نويسنده , , L.-C and Hwang، نويسنده , , J and Cheng، نويسنده , , C.-P and Wertheim، نويسنده , , G.K، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2002
Pages :
5
From page :
327
To page :
331
Abstract :
The analysis of synchrotron radiation Si 2p core-level photoemission spectra provides fruitful information about the interface structure. A constraint on layer-wise intensities, based on the inelastic mean-free-path, is used to extract the 2p binding energy shifts of the first three outer layers. Both clean and adsorbate-covered surfaces have been successfully analyzed. The results for the clean Si(0 0 1)-2×1 surface, which reflect both the strain due to the reconstruction and changes in final-state screening, are in very good agreement with theory. However, for adsorbate-covered surfaces charge-flow, due to the electronegativity difference between Si and adsorbate atoms, dominates the shifts. Results for prototypical interfaces, with the adsorbates Ge, Cl, and oxygen, are presented.
Keywords :
Silicon , Oxygen , Chlorine , Germanium , growth , Single crystal epitaxy , Photoelectron spectroscopy
Journal title :
Surface Science
Serial Year :
2002
Journal title :
Surface Science
Record number :
1681334
Link To Document :
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