Author/Authors :
Fritsche، نويسنده , , R. and Wisotzki، نويسنده , , E. and Thiكen، نويسنده , , A. A. S. Islam، نويسنده , , A.B.M.O. and Klein، نويسنده , , A. and Jaegermann، نويسنده , , W. and Rudolph، نويسنده , , R. and Tonti، نويسنده , , D. and Pettenkofer، نويسنده , , C.، نويسنده ,
Abstract :
A Ga–Se half-sheet van der Waals surface termination on Si(1 1 1) is prepared in a two step process involving selenization of a monolayer gallium on the surface. Substrate and film growth were investigated in situ by high-resolution synchrotron X-ray photoemission and low-energy electron diffraction. Due to repeated reorganizing of the Si surface atoms and etching of Ga by excess Se it is generally difficult to achieve a complete surface coverage by GaSe by this preparation procedure.
Keywords :
Low energy electron diffraction (LEED) , Silicon , epitaxy , Photoelectron spectroscopy
