Title of article
Ab initio simulation of diamond epitaxial growth on copper
Author/Authors
V.G. Zavodinsky )، نويسنده , , V.G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
4
From page
139
To page
142
Abstract
Density functional theory calculations show that epitaxial diamond films can be grown on copper substrates due to small mismatches in the copper and diamond lattice parameters and to the absence of their chemical affinity. The mean cohesive energy for 〈1 0 0〉 films is larger than that for 〈1 1 1〉 films. However, the 〈1 1 1〉 films are more stable than the 〈1 0 0〉 ones in respect to separation from the copper substrate.
Keywords
Ab initio simulation , Diamond film , heteroepitaxy
Journal title
Computational Materials Science
Serial Year
2006
Journal title
Computational Materials Science
Record number
1681549
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