Title of article :
Ab initio simulation of diamond epitaxial growth on copper
Author/Authors :
V.G. Zavodinsky )، نويسنده , , V.G.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
4
From page :
139
To page :
142
Abstract :
Density functional theory calculations show that epitaxial diamond films can be grown on copper substrates due to small mismatches in the copper and diamond lattice parameters and to the absence of their chemical affinity. The mean cohesive energy for 〈1 0 0〉 films is larger than that for 〈1 1 1〉 films. However, the 〈1 1 1〉 films are more stable than the 〈1 0 0〉 ones in respect to separation from the copper substrate.
Keywords :
Ab initio simulation , Diamond film , heteroepitaxy
Journal title :
Computational Materials Science
Serial Year :
2006
Journal title :
Computational Materials Science
Record number :
1681549
Link To Document :
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