Title of article :
Cs doping effects on electronic structure of thin nanotubes
Author/Authors :
Khazaei، نويسنده , , Mohammad and Farajian، نويسنده , , Amir A. and Mizuseki، نويسنده , , Hiroshi and Kawazoe، نويسنده , , Yoshiyuki، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Abstract :
Using ab initio density functional simulations, we investigate the localization of energy states and the changes of the electronic structures in pristine and Cs-doped cap and stem (5, 5) nanotubes. Although the pristine capped structure has a semiconducting character, the doped capped structures are metallic. For the (5, 5) stem, the dangling bonds created as a result of Cs collisions result in generation of extra states within the pseudogap, such that the density of states at Fermi energy is increased. The localization of the states near the Fermi energy at the cap, and the reduction of the work functions of Cs-doped capped structures make them suitable for field emission.
Keywords :
Carbon nanotube , Field emission , Adsorption , cesium
Journal title :
Computational Materials Science
Journal title :
Computational Materials Science