Title of article
Simulation of Cs adsorption on clean and Sb-covered GaAs surfaces
Author/Authors
Kulkova، نويسنده , , S.E. and Khanin، نويسنده , , D.V. and Subashiev، نويسنده , , A.V.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
4
From page
199
To page
202
Abstract
A full-potential linearized augmented-plane-wave (FLAPW) method is used for the investigation of the electronic structure of a series group III–V semiconductors. The electronic structure of low-index clean GaAs surfaces and with thin overlayers of cesium is studied. We analyze Cs(O) coadsorption on the GaAs(0 0 1) surface as well as the influence of Sb on its electron and adsorption properties.
Keywords
Electronic structure , III–V semiconductors , Thin filmsWork function
Journal title
Computational Materials Science
Serial Year
2006
Journal title
Computational Materials Science
Record number
1681585
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