Title of article
Finite temperature studies of Te adsorption on Si(0 0 1)
Author/Authors
Sen، نويسنده , , Prasenjit and Ciraci، نويسنده , , S and Batra، نويسنده , , Inder P and Grein، نويسنده , , C.H and Sivananthan، نويسنده , , S، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2002
Pages
11
From page
79
To page
89
Abstract
We perform first principles density functional calculations to investigate the adsorption of Te on the Si(0 0 1) surface from low coverage up to a monolayer coverage. At low coverage, a Te atom is adsorbed on top of the Si surface dimer bond. At higher coverages, Te atoms adsorption causes the Si–Si dimer bond to break, lifting the (2×1) reconstruction. We find no evidence of the Te–Te dimer bond formation as a possible source of the (2×1) reconstruction at a monolayer coverage. Finite temperature ab initio molecular dynamics calculations show that Te covered Si(0 0 1) surfaces do not have any definitive reconstruction. Vibrations of the bridged Te atoms in the strongly anharmonic potentials prevent the reconstruction structure from attaining any permanent, two-dimensional periodic geometry. This explains why experiments attempting to find a definite model for the reconstruction reached conflicting conclusions.
Keywords
Molecular dynamics , Silicon , Adatoms , Density functional calculations , Surface relaxation and reconstruction , growth
Journal title
Surface Science
Serial Year
2002
Journal title
Surface Science
Record number
1681706
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