Title of article :
Clustering effects in a low coverage deposition of gold on the GaAs(0 0 1)-β2(2×4) surface: an STM–UHV and theoretical study
Author/Authors :
Aldo Amore Bonapasta، نويسنده , , A and Scavia، نويسنده , , G and Buda، نويسنده , , F، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2002
Abstract :
A comparative study of gold deposition on the GaAs(0 0 1)-β2(2×4) surface based on scanning tunneling microscopy (STM)–ultra high vacuum (UHV) and Car–Parrinello calculations has been carried out. The theoretical results show that the preferential reactive sites of an isolated Au adatom on the GaAs surface drive a self-organizing process of further Au adatoms onto the surface, thus determining an Au clusterization onto the two-As-dimer cell. On the other hand, STM–UHV images reveal, for Au depositions <1 ML, a decorating effect of gold towards the GaAs(0 0 1)-β2(2×4) unit cell. In detail, gold clusters tend to cover the two-As-dimer cell without modifying the (2×4) reconstruction, in agreement with the theoretical results. Moreover, a fine comparison between the STM images of gold clusters and the theoretical results reveals that each of these clusters can be composed of four Au adatoms directly interacting with the two As dimers of the GaAs unit cell. An STM–UHV analysis of the surface for a deposition >1 ML suggests that gold clusterizes into 3D clusters rather than forming a 2D layer.
Keywords :
Density functional calculations , Scanning tunneling microscopy , Metal–semiconductor interfaces , Gold , Gallium arsenide
Journal title :
Surface Science
Journal title :
Surface Science