Title of article :
Vacancy diffusion in the Cu(0 0 1) surface II: Random walk theory
Author/Authors :
Somfai، نويسنده , , E. and van Gastel، نويسنده , , R. and van Albada، نويسنده , , S.B. and van Saarloos، نويسنده , , W. and Frenken، نويسنده , , J.W.M.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2002
Pages :
8
From page :
26
To page :
33
Abstract :
We develop a version of the vacancy mediated tracer diffusion model, which follows the properties of the physical system of In atoms diffusing within the top layer of Cu(0 0 1) terraces. This model differs from the classical tracer diffusion problem in that (i) the lattice is finite, (ii) the boundary is a trap for the vacancy, and (iii) the diffusion rate of the vacancy is different, in our case strongly enhanced, in the neighborhood of the tracer atom. A simple continuum solution is formulated for this problem, which together with the numerical solution of the discrete model compares well with our experimental results.
Keywords :
surface diffusion , Copper , Indium
Journal title :
Surface Science
Serial Year :
2002
Journal title :
Surface Science
Record number :
1681768
Link To Document :
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