Author/Authors :
Kowalik، نويسنده , , I.A. and Kowalski، نويسنده , , B.J. and Orlowski، نويسنده , , B.A. and Lusakowska، نويسنده , , E. and Iwanowski، نويسنده , , R.J. and Mickevi?ius، نويسنده , , S. and Johnson، نويسنده , , R.L. and Grzegory، نويسنده , , I. and Porowski، نويسنده , , S.، نويسنده ,
Abstract :
Mn/GaN interface formation on a GaN(0 0 0 1)-(1 × 1) surface has been investigated by means of resonant photoelectron spectroscopy, as a function of Mn coverage. A contribution of Mn 3d states to the emission from the valence band of the system was discerned in photoemission spectra taken for photon energies near to Mn 3p → 3d excitation. Interaction between Mn and GaN was also monitored by spectroscopy of the Ga 3d core level. It was shown that Mn on GaN formed a reactive interface with contribution of a compound containing Mn and Ga. Annealing of Mn/GaN at 400 °C changed the surroundings of large part of Mn ions. The Mn 3d related emission spectrum was found to be similar to that characteristic of Mn built into tetrahedrally coordinated semimagnetic semiconductors.
Keywords :
Gallium nitride , Manganese , Metal–semiconductor interfaces , Synchrotron radiation photoelectron spectroscopy
