Temperature dependence of the phase manipulation feasibility between c(4 × 2) and p(2 × 2) on the Si(1 0 0) surface

Previously, we have reported that it is possible to manipulate the Si(1 0 0) surface phases between c(4 × 2) and p(2 × 2) by precise sample bias control in scanning tunneling microscopy (STM). Electron injection into the surface from the STM tip is responsible for the phase manipulation. In the present study, the phase manipulation by STM is thoroughly studied in a wide range of temperature from 4.2 to 100 K. We have found that the manipulation is feasible below 40 K but not above 40 K. This temperature dependence is quite similar to the recent result observed by low-energy electron diffraction (LEED), which was viewed as an order–disorder phase transition of the Si(1 0 0) surface below 40 K. From the similarity of both phenomenon occurring at 40 K, we conclude that the order–disorder phase transition is induced by energetic electron irradiation onto the Si(1 0 0) surface during the LEED analysis.