Author/Authors :
Krischok، نويسنده , , S. and Yanev، نويسنده , , V. and Balykov، نويسنده , , O. and Himmerlich، نويسنده , , Luiene M. and Schaefer، نويسنده , , J.A. and Kosiba، نويسنده , , R. and Ecke، نويسنده , , G. and Cimalla، نويسنده , , I. and Cimalla، نويسنده , , V. and Ambacher، نويسنده , , O. and Lu، نويسنده , , H. V. Schaff، نويسنده , , W.J. and Eastman، نويسنده , , L.F.، نويسنده ,
Abstract :
In this study InN films with wurtzite structure grown by plasma induced molecular beam epitaxy were investigated by X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), Auger electron spectroscopy (AES), and electron energy loss spectroscopy (EELS) in order to determine the chemical composition of the sample surfaces before and after ion bombardment. Samples which were investigated without any cleaning procedures showed some contaminations (O and C) due to the previous exposure to air. The ratio between In and N was examined by XPS. The surface contaminations were removed by bombarding the surface with Ar+ ions (Ekin=500 eV). Due to preferential sputtering an In rich surface is formed. The degree of In enrichment is strongly dependent on the incident angle of the ions.
Keywords :
Electron energy loss spectroscopy (EELS) , Auger electron spectroscopy , Photoelectron spectroscopy , Molecular Beam Epitaxy , nitrides
