TOF–LEIS analysis of ultra thin films: Ga and Ga-N layer growth on Si(1 1 1)

In the paper the ability of TOF–LEIS to analyse the thickness and growth modes of Ga and Ga-N ultra thin films was demonstrated. It is shown that multiple scattering, which usually complicates the spectra evaluation, can be successfully used for the thickness determination of ultra thin films. A linear dependence of the half-width of the Ga peak on the Ga-surface coverage within the range of 1–9 ML in the TOF–LEIS spectrum of Ga layers grown on Si(1 1 1) was found. Additionally, the development of Ga- and Si-peak heights with the Ga-surface coverage suggests the Ga layers grow in the way close to the layer-plus-island growth mode.