Title of article
Influence of structural relaxation on the optical and electronic properties of embedded Ge nanocrystals
Author/Authors
Weissker، نويسنده , , H.-Ch. and Furthmüller، نويسنده , , J. and Bechstedt، نويسنده , , F.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
4
From page
961
To page
964
Abstract
Structural relaxation is shown to be indispensable for the correct description of the electronic and optical properties of embedded group-IV nanocrystals. Ab initio calculations show that the energetic position of the localized gap states and, consequently, the optical spectra, are very sensitive with respect to the ionic relaxation. Comparison with the results obtained for the corresponding ideal structures allows to quantify the influence of the relaxation.
Keywords
Surface electronic phenomena (work function , Surface potential , Surface states , etc.) , Silicon , Germanium , Single crystal surfaces , Surface relaxation and reconstruction , Density functional calculations
Journal title
Surface Science
Serial Year
2004
Journal title
Surface Science
Record number
1682233
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