Title of article
S and O adsorption on pure and Ge doped Ag(1 1 1)
Author/Authors
Blomqvist، نويسنده , , J. and Salo، نويسنده , , P. and Alatalo، نويسنده , , M.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
4
From page
1067
To page
1070
Abstract
We have studied the possibility of preventing the sulphur poisoning of silver surfaces by doping them with Ge. Our first principles calculations show that the presence of Ge at the topmost surface layer does not affect the adsorption characteristics of S much, yet Ge helps to bind oxygen much more strongly. We thus predict that Ge doping induces a protective O layer which helps to prevent the poisoning caused by sulphur.
Keywords
computer simulations , Density functional calculations , Oxygen , Sulphur , Surface electronic phenomena (work function , etc.) , surface structure , silver , morphology , Roughness , Adatoms , and topography , Surface potential , Surface states
Journal title
Surface Science
Serial Year
2004
Journal title
Surface Science
Record number
1682275
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