Electron mean free path for GaAs(1 0 0)-c(4 × 4) at very low energies

Electron mean free path (MFP) was determined by the angular resolved photoemission in 10–40 eV energy range for GaAs(1 0 0)-c(4 × 4) by the overlayer method. The investigation was based on the attenuation of the normal photoemission intensity of the Al 2p line from the molecular-beam-epitaxy grown GaAlAs layer buried four monolayers of GaAs below the surface. The energy dependence of the MFP shows a pronounced maximum at about 30 eV which is related to the corresponding section of the electron band structure of GaAs(1 0 0).