Author/Authors :
Saranin، نويسنده , , A.A. and Zotov، نويسنده , , A.V. and Kotlyar، نويسنده , , V.G. and Kasyanova، نويسنده , , T.V. and Utas، نويسنده , , O.A. and Okado، نويسنده , , H. and Katayama، نويسنده , , M. and Oura، نويسنده , , K.، نويسنده ,
Abstract :
Formation of the beryllium (Be) submonolayers on the Si(1 1 1)7 × 7 surface has been studied using scanning tunneling microscopy. It has been found that Be interaction with Si(1 1 1) at 500–700 °C results in a self-assembly formation of the four various types of the highly-ordered nanostructure arrays. The nanostructure arrays develop on top of the “soft” silicide layer, which period and orientation alter with the nanostructure growth: the shorter the nanostructure period, the larger the rotation angle. The main structural parameters of the silicide layer and nanostructure arrays have been established.
Keywords :
Atom–solid interactions , morphology , Scanning tunneling microscopy , and topography , Roughness , Silicon , Beryllium , surface structure
