• Title of article

    Dissociative adsorption of hydrogen on strained Cu surfaces

  • Author/Authors

    Sakong، نويسنده , , Sung and Groك، نويسنده , , Axel، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2003
  • Pages
    12
  • From page
    107
  • To page
    118
  • Abstract
    The adsorption and dissociation of hydrogen on strained clean and oxygen-covered Cu surfaces have been studied by calculations based on density functional theory within the generalized gradient approximation. On all surfaces we find an upshift of the surface d-band center upon lattice expansion. Still there is no general trend in the hydrogen adsorption energies at the high-symmetry sites and the dissociation barrier heights as a function of lattice strain for the low-index Cu surfaces in contrast to the predictions of the d-band model. It turns out that the adsorbate-induced change of the Cu local d-band density of states has to be taken into account in order to rationalize these results. As far as the oxygen-precovered Cu(1 0 0) surface is concerned, the strain-induced change in the hydrogen adsorption energies and dissociation barriers can simply be related to the increased hydrogen–oxygen distance upon lattice expansion.
  • Keywords
    Density functional calculations , Low index single crystal surfaces , Surface stress , Copper , hydrogen atom , Chemisorption
  • Journal title
    Surface Science
  • Serial Year
    2003
  • Journal title
    Surface Science
  • Record number

    1682856