Title of article
Dissociative adsorption of hydrogen on strained Cu surfaces
Author/Authors
Sakong، نويسنده , , Sung and Groك، نويسنده , , Axel، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2003
Pages
12
From page
107
To page
118
Abstract
The adsorption and dissociation of hydrogen on strained clean and oxygen-covered Cu surfaces have been studied by calculations based on density functional theory within the generalized gradient approximation. On all surfaces we find an upshift of the surface d-band center upon lattice expansion. Still there is no general trend in the hydrogen adsorption energies at the high-symmetry sites and the dissociation barrier heights as a function of lattice strain for the low-index Cu surfaces in contrast to the predictions of the d-band model. It turns out that the adsorbate-induced change of the Cu local d-band density of states has to be taken into account in order to rationalize these results. As far as the oxygen-precovered Cu(1 0 0) surface is concerned, the strain-induced change in the hydrogen adsorption energies and dissociation barriers can simply be related to the increased hydrogen–oxygen distance upon lattice expansion.
Keywords
Density functional calculations , Low index single crystal surfaces , Surface stress , Copper , hydrogen atom , Chemisorption
Journal title
Surface Science
Serial Year
2003
Journal title
Surface Science
Record number
1682856
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