Title of article
First principle calculations of the ground state properties and structural phase transformation for ternary chalcogenide semiconductor under high pressure
Author/Authors
Thangavel، نويسنده , , R. and Prathiba، نويسنده , , G. and Anto Naanci، نويسنده , , Bhupesh B. and Rajagopalan، نويسنده , , M. and Kumar، نويسنده , , J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
8
From page
193
To page
200
Abstract
We report the electronic structure calculations on ZnMgO2, ZnCdO2, CdMgO2, ZnMgS2, ZnCdS2 and CdMgS2 in the chalcopyrite, rock salt, wurtzite and zincblende structures. From this study we conclude that II–VI semiconductor ternary alloys are direct band semiconductors and from the energy considerations we arrive at the conclusion that these ternary compounds are found to be more stable in chalcopyrite type structure rather than in rock salt, wurtzite or zincblende type structures. The calculated bandgap values, cohesive energy, volume collapse, and disorder parameter (bandgap bowing) for these chalcogenides are obtained and found to be in agreement with the reported value. We predict that these alloys undergo a structural phase transition under pressure from chalcopyrite to rock salt type structure.
Keywords
Alloys , II–VI semiconductorEquation of state , Electronic structure , Atomic sphere approximation (ASA) , cohesive energy , Density of states
Journal title
Computational Materials Science
Serial Year
2007
Journal title
Computational Materials Science
Record number
1682912
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