Title of article
Variable temperature STM studies of the adsorption of oxygen on the Si(1 1 1)-7×7 surface
Author/Authors
Mayne، نويسنده , , Andrew J and Rose، نويسنده , , Franck and Comtet، نويسنده , , Geneviève and Hellner، نويسنده , , Lucette and Dujardin، نويسنده , , Gérald، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2003
Pages
6
From page
132
To page
137
Abstract
The scanning tunnelling microscope (STM) has been used to study the adsorption at room (300 K) and low (30 K) temperature of oxygen on the Si(1 1 1)-7×7 surface. Subsequently, STM manipulation has been used to find out which of the observed sites can be modified (displacement, transformation, desorption). It was found that the adsorption is quite different at 30 K compared to 300 K and that the manipulation at room temperature is essential in the identification of the sites. These results are in general agreement with recent conclusions from theoretical work [Phys. Rev. Lett. 84 (2000) 1724] and synchrotron radiation experiments [Phys. Rev. B 65 (2002) 035315].
Keywords
Scanning tunneling microscopy , Oxidation , Silicon , Semiconducting surfaces , Adsorption kinetics
Journal title
Surface Science
Serial Year
2003
Journal title
Surface Science
Record number
1683096
Link To Document