Title of article
Tight-binding calculation of the electronic band structure of GaN, AlN and BN (0 0 1) ideal surfaces
Author/Authors
Velasco، نويسنده , , V.R and Gaggero-Sager، نويسنده , , L.M and Tutor، نويسنده , , J، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2003
Pages
7
From page
267
To page
273
Abstract
We study the electronic band structure of the zinc-blende phase (0 0 1) ideal surface of GaN, AlN and BN by means of an empirical tight binding sp3 s* Hamiltonian with nearest-neighbour interactions plus some second-neighbour interactions and the surface Green function matching method. We have studied both anion and cation terminated surfaces and we have obtained the different surface states with their corresponding spectral localization and orbital character.
Keywords
Surface electronic phenomena (work function , Surface potential , Surface states , etc.) , nitrides , Semiconducting surfaces
Journal title
Surface Science
Serial Year
2003
Journal title
Surface Science
Record number
1683250
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