• Title of article

    Tight-binding calculation of the electronic band structure of GaN, AlN and BN (0 0 1) ideal surfaces

  • Author/Authors

    Velasco، نويسنده , , V.R and Gaggero-Sager، نويسنده , , L.M and Tutor، نويسنده , , J، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2003
  • Pages
    7
  • From page
    267
  • To page
    273
  • Abstract
    We study the electronic band structure of the zinc-blende phase (0 0 1) ideal surface of GaN, AlN and BN by means of an empirical tight binding sp3 s* Hamiltonian with nearest-neighbour interactions plus some second-neighbour interactions and the surface Green function matching method. We have studied both anion and cation terminated surfaces and we have obtained the different surface states with their corresponding spectral localization and orbital character.
  • Keywords
    Surface electronic phenomena (work function , Surface potential , Surface states , etc.) , nitrides , Semiconducting surfaces
  • Journal title
    Surface Science
  • Serial Year
    2003
  • Journal title
    Surface Science
  • Record number

    1683250