Title of article :
Tight-binding calculation of the electronic band structure of GaN, AlN and BN (0 0 1) ideal surfaces
Author/Authors :
Velasco، نويسنده , , V.R and Gaggero-Sager، نويسنده , , L.M and Tutor، نويسنده , , J، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2003
Abstract :
We study the electronic band structure of the zinc-blende phase (0 0 1) ideal surface of GaN, AlN and BN by means of an empirical tight binding sp3 s* Hamiltonian with nearest-neighbour interactions plus some second-neighbour interactions and the surface Green function matching method. We have studied both anion and cation terminated surfaces and we have obtained the different surface states with their corresponding spectral localization and orbital character.
Keywords :
Surface electronic phenomena (work function , Surface potential , Surface states , etc.) , nitrides , Semiconducting surfaces
Journal title :
Surface Science
Journal title :
Surface Science