Title of article :
Photoemission study of the iron-induced chemical reduction of silicon native oxide
Author/Authors :
Garnier، نويسنده , , M.G. and de los Arcos، نويسنده , , T. and Boudaden، نويسنده , , J. and Oelhafen، نويسنده , , P.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2003
Pages :
9
From page :
130
To page :
138
Abstract :
Samples consisting of Fe deposited onto a Si wafer covered with its native oxide layer have been studied by photoelectron spectroscopy for different Fe coverages and different deposition techniques involving different kinetic energies for the deposited Fe atoms. We find that the Fe atoms are buried into the substrate even for low kinetic energy techniques, and that a reduction of the Si oxide concomitant with an oxidation of the Fe occurs. This reaction can be assisted by increasing the kinetic energy of the Fe atoms.
Keywords :
Iron , Silicon oxides , Evaporation and sublimation , Photoelectron spectroscopy , Metal–oxide–semiconductor (MOS) structures , Silicon
Journal title :
Surface Science
Serial Year :
2003
Journal title :
Surface Science
Record number :
1683342
Link To Document :
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