Title of article :
Atomistic simulation of misfit dislocation in metal/oxide interfaces
Author/Authors :
Long، نويسنده , , Y. and Chen، نويسنده , , N.X.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
8
From page :
426
To page :
433
Abstract :
In this work, we use a Chen–Möbius inversion method to get the interatomic potentials for metal/oxide interfaces, and then study the misfit dislocation in a series of interfaces, including Au/MgO, Rh/MgO and Ni/MgO. The calculation shows that dislocation line always prefers at the first monolayer of metal side, with metal on top of Mg at the dislocation core, and metal on top of O at the interface coherent area. Also, the Burgers vector for these interfaces is determined at two cases. For Rh/MgO and Ni/MgO, it keeps the value of a 2 [ 1 1 0 ] . But for Au/MgO, it changes from a 2 [ 1 1 0 ] to a[1 0 0] as the number of monolayers in metal side increases. This work shows a theoretical understanding of misfit dislocations in metal/oxide interfaces, from dislocation structure, density to Burgers vector orderly, and gives some hints to experiments.
Keywords :
Misfit dislocation , Chen–M?bius inversion method , Metal/oxide interface
Journal title :
Computational Materials Science
Serial Year :
2008
Journal title :
Computational Materials Science
Record number :
1683344
Link To Document :
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