Title of article :
Time-evolution of the GaAs(0 0 1) pre-roughening process
Author/Authors :
Ding، نويسنده , , Z and Bullock، نويسنده , , D.W and Thibado، نويسنده , , P.M and LaBella، نويسنده , , V.P and Mullen، نويسنده , , Kieran، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2003
Abstract :
The GaAs(0 0 1) surface is observed to evolve from being perfectly flat to a surface half covered with one-monolayer high spontaneously formed GaAs islands. The dynamics of this process are monitored with atomic-scale resolution using scanning tunneling microscopy. Surprisingly, pit formation dominates the early stages of island formation. Insight into the nucleation process is reported.
Keywords :
Scanning tunneling microscopy , surface structure , Surface roughening , morphology , Roughness , Gallium arsenide , and topography , Surfaces defects
Journal title :
Surface Science
Journal title :
Surface Science
