Title of article :
Effect of humidity on nano-oxidation of p-Si(0 0 1) surface
Author/Authors :
Kuramochi، نويسنده , , H. and Ando، نويسنده , , K. and Yokoyama، نويسنده , , H.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2003
Abstract :
The effect of humidity on the nano-oxidation of p-Si(0 0 1) using an atomic force microscope is systematically studied at the relative humidity from 40% to 80%. Nanometer scale structures are fabricated at various relative humidities, applied voltages, exposure times and tip speeds. The size and shape of the fabricated oxide and contribution of the ionic diffusion to the process changed depending on the relative humidity. It was proved that the humidity is a noteworthy parameter for nano-oxidation and needs more careful consideration on equal terms with the oxidation voltage. The first systematic and fundamental information of the humidity effects on the process over a wide humidity range is provided for further study on meniscus formation.
Keywords :
atomic force microscopy , water , Oxidation , Silicon
Journal title :
Surface Science
Journal title :
Surface Science