Title of article
In-rich (4 × 2) and (2 × 4) reconstructions of the InAs(0 0 1) surface
Author/Authors
Miwa، نويسنده , , R.H. and Miotto، نويسنده , , R. and Ferraz، نويسنده , , A.C.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2003
Pages
11
From page
101
To page
111
Abstract
Based on a first-principles pseudopotential calculation, within the local density approximation, we have studied a series of different structural models for the In-rich InAs(0 0 1) surface, including a very recent model proposed by Kumpf et al. based in X-ray diffraction experiments. Our data suggests that the ζ(4 × 2) model corresponds to the most probable structure, from the energetic point of view. The stability of the ζ(4 × 2) structure is mainly attributed to electrostatic and structural characteristics of the surface. The atomic and electronic structure of this system is analysed in detail. Experimental scanning tunnelling microscopy images are reinterpreted in the lights of our theoretical simulated images for the proposed structure, with a view to explain contradicting experimental and theoretical results.
Keywords
Density functional calculations , Surface electronic phenomena (work function , Indium arsenide , etc.) , Surface potential , Surface states
Journal title
Surface Science
Serial Year
2003
Journal title
Surface Science
Record number
1683792
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