Author/Authors :
K.-M. and Widdra، نويسنده , , W and Brِcker، نويسنده , , A. and Gieكel، نويسنده , , T and Hertel، نويسنده , , I.V and Krüger، نويسنده , , Hannelore Liero، نويسنده , , A and Noack، نويسنده , , F and Petrov، نويسنده , , V and Pop، نويسنده , , D and Schmidt، نويسنده , , P.M and Weber، نويسنده , , R and Will، نويسنده , , I and Winter، نويسنده , , B، نويسنده ,
Abstract :
Combined laser and synchrotron radiation (SR) photoelectron spectroscopy with a temporal resolution of 60 ps has been applied to study the relaxation of the surface photovoltage (SPV) after laser pulse excitation for a SiO2/Si(1 0 0) interface. For zero time delay between laser and SR pulses the Si 2p core level exhibits an initial spectral shift of 300 meV which relaxes non-exponentially to about 100 meV after 800 ns. The relaxation of the SPV can be modeled using a self-decelerating carrier relaxation based on a thermionic emission model.
Keywords :
Surface potential , Synchrotron radiation photoelectron spectroscopy , Surface states , Silicon oxides , Silicon , etc.) , Surface electronic phenomena (work function
