PDECB-based approach to radical-beam epitaxy of high-quality cubic GaN and AlN

A novel experimental approach to the growth of defect-free epitaxial films of (Al,Ga,Cr)N is being developed with the help of ab initio molecular orbital methods. Some key points to optimize the growth conditions were suggested by quantum chemical analyses of the surface radical reactions involved in the homoepitaxial growth of cubic group-III nitride under the supply of dimethylaluminumnitrene ((CH3)2AlN) or dimethylgalliumnitrene ((CH3)2GaN).