Title of article
In situ scanning tunneling microscopy of InAs quantum dots on GaAs(0 0 1) during molecular beam epitaxial growth
Author/Authors
Bell، نويسنده , , G.R. and Pristovsek، نويسنده , , M. and Tsukamoto، نويسنده , , S. and Orr، نويسنده , , B.G. and Arakawa، نويسنده , , Y. and Koguchi، نويسنده , , N.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2003
Pages
7
From page
234
To page
240
Abstract
Arrays of InAs quantum dots (QDs) have been studied using in situ scanning tunneling microscopy (STM) during their growth by molecular beam epitaxy on GaAs(0 0 1). At a substrate temperature of 400 °C under As4 flux, both the QDs and the underlying step-terrace structure of the wetting layer (WL) are found to be static, with neither step-flow nor QD ripening observed. Higher resolution images of the mature WL show slightly different [1 1 0] periodicities to those observed in quenched STM studies.
Keywords
Scanning tunneling microscopy , epitaxy , Indium arsenide , Gallium arsenide
Journal title
Surface Science
Serial Year
2003
Journal title
Surface Science
Record number
1683909
Link To Document