Author/Authors :
Bell، نويسنده , , G.R. and Pristovsek، نويسنده , , M. and Tsukamoto، نويسنده , , S. and Orr، نويسنده , , B.G. and Arakawa، نويسنده , , Y. and Koguchi، نويسنده , , N.، نويسنده ,
Abstract :
Arrays of InAs quantum dots (QDs) have been studied using in situ scanning tunneling microscopy (STM) during their growth by molecular beam epitaxy on GaAs(0 0 1). At a substrate temperature of 400 °C under As4 flux, both the QDs and the underlying step-terrace structure of the wetting layer (WL) are found to be static, with neither step-flow nor QD ripening observed. Higher resolution images of the mature WL show slightly different [1 1 0] periodicities to those observed in quenched STM studies.
Keywords :
Scanning tunneling microscopy , epitaxy , Indium arsenide , Gallium arsenide
