Title of article :
Absolute surface energy determination
Author/Authors :
J.-J. Métois، نويسنده , , J.J and Müller، نويسنده , , P، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2004
Abstract :
Experimental determination of absolute surface energies remains a challenge. We propose a simple method based on two independent measurements on 3D and 2D equilibrium shapes completed by the analysis of the thermal fluctuation of an isolated step. Using then basic equations (Wulff’ theorem, Gibbs–Thomson equation, thermodynamics fluctuation of an isolated step) allows us to extract the absolute surface free energy of a singular face. The so-proposed method can be applied when (i) all orientations exist on the equilibrium shape, (ii) the surface stress is isotropic. This procedure is applied to the case of Si(1 1 1) where we find 0.59 J m−2 ⩽ γ(1 1 1) ⩽ 0.83 J m−2 at 1373 K.
Keywords :
Stepped single crystal surfaces , surface energy , Surface thermodynamics (including phase transitions) , Silicon
Journal title :
Surface Science
Journal title :
Surface Science