Title of article
Surface reconstructions of InGaAs alloys
Author/Authors
M.L. and Mirecki Millunchick، نويسنده , , J. and Riposan، نويسنده , , Jens A. and Dall Aaslyng، نويسنده , , B.J. and Pearson، نويسنده , , Chris and Orr، نويسنده , , B.G.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
7
From page
1
To page
7
Abstract
The atomic surface structures of InGaAs lattice-matched and 1.9% compressively strained alloys were examined using in situ scanning tunneling microscopy. The surface of the lattice-matched films is comprised of an anion-rich but mixed-termination (4 × 3) or (6 × 4) reconstruction. The strained alloys exhibit regions of the same reconstructions, in addition to pockets of α2(2 × 4) in the case of the In0.27Ga0.73As/GaAs films, and β2(2 × 4) in the case of the In0.81Ga0.19As/InP. Annealing experiments show that the coverage of the α2(2 × 4) and β2(2 × 4) regions decreases with increasing annealing time. Therefore, it is postulated that the composition of these (2 × 4) reconstructions is enriched in In compared to the (4 × 3)/(6 × 4).
Keywords
Scanning tunneling microscopy , Molecular Beam Epitaxy , Gallium arsenide , Surface relaxation and reconstruction , Indium arsenide
Journal title
Surface Science
Serial Year
2004
Journal title
Surface Science
Record number
1684212
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