Title of article :
Si adsorption on Cu(1 1 0) surface from ab initio calculation
Author/Authors :
He، نويسنده , , Guomin and Li، نويسنده , , Shuping and Zhou، نويسنده , , Zicong Zhou، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2004
Abstract :
Using density-functional theory within the generalized gradient approximation the interaction between atomic Si and the Cu(1 1 0) surface is investigated. Various structures of on-surface adsorption as well as surface-substitutional adsorption for a wide range of Si coverage are considered. Our results shows that the Cu(1 1 0) surface is active towards adsorption of Si. The energetically most preferred structure is the c(2 × 2)-Si/Cu(1 1 0) surface alloy. The reason that (2 × 2) Si chain can form on c(2 × 2)-Si/Cu(1 1 0) surface is due to the particular stability of c(2 × 2)-Si/Cu(1 1 0) surface.
Keywords :
Ab initio quantum chemical methods and calculations , Chemisorption , Copper , Silicon , Silicides
Journal title :
Surface Science
Journal title :
Surface Science