Title of article :
Structural and electronic properties of the Sn/Si(1 1 1)-(2√3×2√3)R30° surface revised
Author/Authors :
Ottaviano، نويسنده , , L. and Profeta، نويسنده , , G. and Petaccia، نويسنده , , L. and Nacci، نويسنده , , C.B. and Santucci، نويسنده , , S.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2004
Abstract :
The Sn/Si(1 1 1)-(2√3×2√3)R30° surface has been reinvestigated with low temperature STM/STS and high resolution core level and valence band photoemission using synchrotron radiation. The experimental evidence indicates a 1.2 ML Sn coverage for this reconstruction, with 14 Sn adatoms per unit cell (only four of which are visible with STM). The surface is semiconducting with a band gap value of 0.8 ± 0.2 eV.
Keywords :
Surface potential , Surface states , etc.) , TIN , Silicon , Semiconductor–semiconductor thin film structures , Scanning tunneling microscopy , Scanning tunneling spectroscopies , Synchrotron radiation photoelectron spectroscopy , Surface electronic phenomena (work function
Journal title :
Surface Science
Journal title :
Surface Science
