Title of article :
Cerium-induced reconstructions on the Si(1 1 1) surface
Author/Authors :
Goshtasbi Rad، نويسنده , , M. and Gِthelid، نويسنده , , M. and Le Lay، نويسنده , , G. Pihl Karlsson، نويسنده , , U.O.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2004
Abstract :
Scanning tunnelling microscopy has been used to investigate cerium-induced reconstructions on Si(1 1 1). Room temperature deposition of submonolayers of Ce is reactive and produces an intricate two layer silicide structure: a 7×7 phase on top of a 23×23 reconstruction, co-existing with the bare Si(1 1 1)-7 × 7 surface.
ing the submonolayer-covered surface at 600 °C generates a one-dimensional (5 × 2) structure comprising both Ce and Si adatoms. This structure coexists with the bare 7 × 7 and a 2 × 3 structure with cerium adatoms in alternating H3 and T4 positions.
Keywords :
Silicon , Cerium , Single crystal surfaces , Scanning tunneling microscopy , Surface relaxation and reconstruction
Journal title :
Surface Science
Journal title :
Surface Science