Title of article
6H-SiC(0 0 0 1) phase transition: evolution of the (6 × 6) magic clusters
Author/Authors
Tok، نويسنده , , E.S. and Ong، نويسنده , , W.J. and Wee، نويسنده , , A.T.S.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
14
From page
145
To page
158
Abstract
Scanning tunneling microscopy (STM) is used to probe the local atomic structure of the 6H-SiC(0 0 0 1) surface together with X-ray photoelectron spectroscopy (XPS) in UHV. We report STM observation of localized clusters assembled in an ordered (6 × 6) arrangement after annealing the (3 × 3) phase at 1000 °C. These clusters are round in shape and possess a diameter of 14.3 ± 0.5 Å and a height of 2.3 ± 0.2 Å. Further annealing of the surface beyond 1000 °C caused the clusters to disappear and we observed the formation of a (6 × 6) ring-like structure at 1050 °C. XPS data show that the surface is still Si rich, unlike the (6√3 × 6√3) phase or graphitic honeycomb structures which normally formed above this temperature. Observation of defect and cluster formation, as well as tetramer agglomeration, suggests the rearrangement of the (3 × 3) structure as temperature increases. STM is used to study this mechanism leading to the formation of (6 × 6) clusters. We propose a model utilizing Si tetra-cluster units as building blocks to elucidate the structure of the (6 × 6) clusters and explain the structural transformation observed.
Keywords
silicon carbide , Clusters , surface structure , Roughness , and topography , Surface thermodynamics (including phase transitions) , Scanning tunneling microscopy , morphology
Journal title
Surface Science
Serial Year
2004
Journal title
Surface Science
Record number
1684687
Link To Document