Title of article :
Physico-chemical state of the silicon atoms in the HfO2/SiO2/Si system
Author/Authors :
Jonnard، نويسنده , , P. and Jarrige، نويسنده , , I. and Renault، نويسنده , , O. and Damlencourt، نويسنده , , J.-F. and Martin، نويسنده , , F.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2004
Abstract :
The physico-chemical state of silicon atoms present in the HfO2/SiO2/Si system is studied by X-ray emission spectroscopy induced by electrons. From the analysis of the Si 3p occupied valence states the very thin oxide interfacial layer is characterized. From the simulation of the spectra and the calculation of the emissive thicknesses, the silicon oxide thickness is determined to be one or two monolayers, depending on the sample. The presence of point defects at the interface is also suggested.
Keywords :
Silicon , Surface potential , X-ray emission , Interface states , Surface states , etc.) , Dielectric phenomena , Surface electronic phenomena (work function
Journal title :
Surface Science
Journal title :
Surface Science
