Title of article
Physico-chemical state of the silicon atoms in the HfO2/SiO2/Si system
Author/Authors
Jonnard، نويسنده , , P. and Jarrige، نويسنده , , I. and Renault، نويسنده , , O. and Damlencourt، نويسنده , , J.-F. and Martin، نويسنده , , F.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
5
From page
396
To page
400
Abstract
The physico-chemical state of silicon atoms present in the HfO2/SiO2/Si system is studied by X-ray emission spectroscopy induced by electrons. From the analysis of the Si 3p occupied valence states the very thin oxide interfacial layer is characterized. From the simulation of the spectra and the calculation of the emissive thicknesses, the silicon oxide thickness is determined to be one or two monolayers, depending on the sample. The presence of point defects at the interface is also suggested.
Keywords
Silicon , Surface potential , X-ray emission , Interface states , Surface states , etc.) , Dielectric phenomena , Surface electronic phenomena (work function
Journal title
Surface Science
Serial Year
2004
Journal title
Surface Science
Record number
1684948
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