Title of article :
Epitaxial growth of CaF2(1 1 1) on Cu(1 1 1) visualized by STM
Author/Authors :
Calleja، نويسنده , , F. and Hinarejos، نويسنده , , J.J. and Vلzquez de Parga، نويسنده , , A.L. and Suturin، نويسنده , , S.M. and Sokolov، نويسنده , , N.S. and Miranda، نويسنده , , R.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2005
Abstract :
The initial stages of the growth of CaF2 on Cu(1 1 1) have been studied by STM as a function of deposition temperature and coverage. No evidence for a reaction between the CaF2 molecules and the Cu substrate has been found. The islands formed at 700 K and above show uniform heights, triangular shapes with two orientations rotated by 60° and flat top surfaces. They can not be imaged at voltages below +3 V indicating their insulating character. The LEED pattern shows that the film is epitaxial, (1 1 1)- oriented and in registry with the substrate. The observations indicate that epitaxial growth of twinned crystallites of CaF2(1 1 1) takes place on Cu(1 1 1).
Keywords :
Insulating films , High index single crystal surfaces , roughness and topography , Copper , Scanning tunneling microscopy , Growth , surface structure , morphology
Journal title :
Surface Science
Journal title :
Surface Science