Title of article
Ion-induced interface layer formation in W/Si and WRe/Si multilayers
Author/Authors
Kessels، نويسنده , , M.J.H. and Verhoeven، نويسنده , , J. and Tichelaar، نويسنده , , F.D. and Bijkerk، نويسنده , , F.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2005
Pages
8
From page
227
To page
234
Abstract
The effects of ion-polishing of the metal layers in W/Si and WRe/Si soft X-ray multilayer mirrors has been investigated, essentially distinguishing between effects at the layer directly treated by the ions, and effects at the interface underneath this layer in the stack. Planar transmission electron microscopy (TEM) and calibrated cross-sectional TEM showed counterbalancing effects, in the case of W/Si systems leading to an optimal soft X-ray reflectivity at 100 eV ion energy.
Keywords
Multilayers , Tungsten , Electron microscopy , Silicon , Thin films , Interfaces , Evaporation , Ion bombardment , reflectometry
Journal title
Surface Science
Serial Year
2005
Journal title
Surface Science
Record number
1685159
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