Title of article :
Effects of strain field in nitrogen-mediated Co film growth on Cu(0 0 1): Segregation and electronic structure change
Author/Authors :
Sekiba، نويسنده , , Daiichiro and Doi، نويسنده , , Shunsuke and Nakatsuji، نويسنده , , Kan and Komori، نويسنده , , Fumio، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2005
Abstract :
Growth modes of Co thin films on the both N-saturated and partially N-adsorbed Cu(0 0 1) surfaces are studied in detail. From results of the STM and XPS measurements, segregation of N atoms depending on the Co island size is concluded. This new type of atom segregation is explained by means of a lattice strain of the substrate due to the small Co island formation. A novel core-level shift of N 1s during the Co film growth is also reported. A possible influence of the lattice strain to the electronic structure of the surfactant is discussed.
Keywords :
Nitrogen atom , Metal–metal interface , Models of surface kinetics , Metal–metal magnetic thin film structures , Low energy electron diffraction (LEED) , Ion implantation methods , X-ray photoelectron spectroscopy , Scanning tunneling microscopy , epitaxy , Growth , Nanopatterning , Surface stress , Surface Tension , Cobalt , surface segregation , Copper , Thin film structures
Journal title :
Surface Science
Journal title :
Surface Science
