Epitaxial growth of anthracene single crystals on graphite (0 0 0 1) substrate with physical vapor growth technique

The epitaxial growth of an anthracene/graphite (0 0 0 1) system was performed using the physical vapor growth technique. Most anthracene single crystals had the clear tendency to form the epitaxial orientation relationships [0 1 0]anthracene// [ 2 1 ¯ 1 ¯ 0 ] , [ 1 ¯ 2 1 ¯ 0 ] , or [ 1 1 2 ¯ 0 ] graphite, (1 0 0)anthracene//(0 0 0 1)graphite, and a few, (0 0 1)anthracene//(0 0 0 1)graphite. The layer structure of each (0 0 1) plane of an anthracene single crystal appeared on lateral planes with a high periodicity, which caused epitaxy with the highly periodic atomic arrangement of a graphite (0 0 0 1) substrate.