Title of article :
Ion desorption caused by N 1s core-level photoexcitation of N2O on Si(1 0 0) surface
Author/Authors :
Nagaoka، نويسنده , , Shin-ichi and Mase، نويسنده , , Kazuhiko، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2005
Abstract :
We used the energy-selected-photoelectron photoion coincidence method, the resonance-Auger-electron photoion coincidence method and monochromatized synchrotron-radiation to study ion desorption caused by N 1s core-level photoexcitation of nitrous oxide (N2O) condensed and physisorbed on a Si(1 0 0) surface. The site-specificity was kept during the resonant Auger processes, that is, within the N 1s core-hole lifetime. However, the site-specific ion desorption was not clearly revealed, though some site-specificity had been reported in the vapor phase. The origin of the disappearance of the site-specificity was discussed in detail.
Keywords :
Auger electron spectroscopy , Photon stimulated desorption (PSD) , Synchrotron radiation photoelectron spectroscopy , photochemistry , nitrogen oxides , Silicon
Journal title :
Surface Science
Journal title :
Surface Science