Electron-ion/atom coincidence measurements of 3 keV He+ interacting with a SiH(1 0 0)-(2 × 1) surface

An electron-scattered ion/atom coincidence technique has been developed and applied to the interaction of 3 keV He+ ions with a Si(1 0 0)–(2 × 1)-H surface. The technique extends scattering and recoiling imaging spectrometry (SARIS) to include electron-scattered particle coincidence methods. The distributions of the scattered projectiles (He0 and He+) on a position-sensitive detector in the range of large scattering angles and in coincidence with the emitted electrons have been measured. The results allow separation of the scattered atom or ion flux from different surface layers and their contributions to the total scattered flux.