Title of article
Investigation of the geometric and electronic structures of ErSi(2−x) with the density functional theory and comparison with STM images
Author/Authors
Duverger، نويسنده , , E. and Palmino، نويسنده , , F. and Ehret، نويسنده , , E. and Labrune، نويسنده , , J.-C.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2005
Pages
9
From page
40
To page
48
Abstract
Study of ErSi(2−x) surfaces system is submitted at one controversy in reason of the STM images bias voltage dependence. In this article, we have investigated by means of calculations issued of the density functional theory (DFT), atomic surface density for 2D and 3D epitaxial erbium silicide on Si(1 1 1). DOS (density of state) in front of the surface, calculated with Wien2k, permits to simulate scanning tunneling microscopy (STM) images in function of the bias voltage and to discriminate the different surface arrangements. The calculations confirm the model of structure accepted and give some new elements in order to close the controversy on the question.
Keywords
Erbium , STM , Interface , Silicon surface , Density functional theory , Wien2k simulation
Journal title
Surface Science
Serial Year
2005
Journal title
Surface Science
Record number
1685425
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